The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Oct. 12, 2016
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/861 (2013.01); H01L 29/0619 (2013.01); H01L 29/1066 (2013.01); H01L 29/205 (2013.01);
Abstract
In an embodiment, a semiconductor device includes a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch. The Group III nitride-based HEMT includes a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, and a field plate structure.