The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Oct. 15, 2013
Applicant:
Byd Company Limited, Shenzhen, CN;
Inventors:
Caiting Zhang, Shenzhen, CN;
Kun Liu, Shenzhen, CN;
Jingjun Fu, Shenzhen, CN;
Wenge Hu, Shenzhen, CN;
Assignee:
BYD COMPANY LIMITED, Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/14616 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H01L 27/14698 (2013.01); H04N 5/378 (2013.01);
Abstract
A pixel cell, a method for manufacturing the same and an image sensor including the same are provided. The pixel cell includes: a substrate; a photodiode, a pass transistor and a floating diffusion structure respectively formed on the substrate, in which the pass transistor is formed between the photodiode and the floating diffusion structure; and a PINNED structure, formed on the substrate and connected with the floating diffusion structure, in which a reset voltage of the floating diffusion structure is higher than a depletion voltage of the PINNED structure.