The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2017

Filed:

Dec. 12, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

John M. Safran, Wappingers Falls, NY (US);

Jochonia N. Nxumalo, Wappingers Falls, NY (US);

Joyce C. Liu, Carmel, NY (US);

Sami Rosenblatt, White Plains, NY (US);

Chandrasekharan Kothandaraman, New York, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76807 (2013.01); H01L 21/76825 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.


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