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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9847266 B1

PDFFull Text
Date of Patent:
Dec. 19, 2017

Filed:

May. 26, 2016

Method of fabricating semiconductor device

Applicants:

Tae-hwa Kim, Hwaseong-Si, KR;

Chanhoon Park, Osan-Si, KR;

Dongsoo Lee, Hwaseong-Si, KR;

Jaehyun Lee, Yongin-Si, KR;

Hyung Joo Lee, Hwaseong-Si, KR;

Kangmin Jeon, Hwaseong-Si, KR;

Kyounghoon Han, Seoul, KR;

Inventors:

Tae-Hwa Kim, Hwaseong-Si, KR;

Chanhoon Park, Osan-Si, KR;

Dongsoo Lee, Hwaseong-Si, KR;

Jaehyun Lee, Yongin-Si, KR;

Hyung Joo Lee, Hwaseong-Si, KR;

Kangmin Jeon, Hwaseong-Si, KR;

Kyounghoon Han, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Volentine & Whitt, PLLC

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01J 37/32963 (2013.01); H01L 21/28008 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 27/11582 (2013.01); H01J 2237/334 (2013.01); H01L 22/12 (2013.01); H01L 27/11556 (2013.01);
Abstract

A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.

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