The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2017

Filed:

Mar. 24, 2017
Applicants:

Jsr Corporation, Tokyo, JP;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hitoshi Osaki, Sunnyvale, CA (US);

Kristin Schmidt, San Jose, CA (US);

Chi-Chun Liu, Albany, NY (US);

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); G03F 7/11 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); G03F 7/039 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/2004 (2013.01); G03F 7/322 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01);
Abstract

A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate. A first composition is applied on lateral faces of the recessed portions of the base pattern, to form a coating. The first composition includes a first polymer which includes on at least one end of a main chain thereof a group capable of interacting with the base pattern. A surface of the coating is contacted with a highly polar solvent. The recessed portions are filled with a second composition. The second composition includes a second polymer which is capable of forming a phase separation structure through directed self-assembly. Phase separation is permitted in the second composition to form phases. A part of the phases is removed to form a miniaturized pattern. The substrate is etched directly or indirectly using the miniaturized pattern as a mask.


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