The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Feb. 23, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Sateesh Koka, Milpitas, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Srikanth Ranganathan, Fremont, CA (US);

Mark Juanitas, Newark, CA (US);

Johann Alsmeier, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11529 (2017.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01);
Abstract

A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.


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