The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Mar. 16, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Wei-Ting Chen, Hsin-Chu, TW;

Che-Cheng Chang, New Taipei, TW;

Chen-Hsiang Lu, Hsin-Chu, TW;

Yu-Cheng Liu, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76804 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/76811 (2013.01); H01L 21/76816 (2013.01); H01L 23/53295 (2013.01); H01L 21/76832 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a dielectric layer over the substrate. The dielectric layer has a trench. The semiconductor device structure includes a conductive line in the trench. The conductive line has a first end portion and a second end portion. The first end portion faces the substrate. The second end portion faces away from the substrate. A first width of the first end portion is greater than a second width of the second end portion.


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