The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Aug. 12, 2010
Applicants:

Stephen Daniels, Dublin, IE;

Shane Glynn, Tullamore, IE;

Felipe Soberon, Dublin, IE;

Paul Maguire, Dublin, IE;

Inventors:

Stephen Daniels, Dublin, IE;

Shane Glynn, Tullamore, IE;

Felipe Soberon, Dublin, IE;

Paul Maguire, Dublin, IE;

Assignee:

Verity Instruments, Inc., Carrollton, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32944 (2013.01); H01J 37/32082 (2013.01); H01J 37/32091 (2013.01); H01J 37/32935 (2013.01); H01J 37/32972 (2013.01); H01L 21/3065 (2013.01); H01L 22/14 (2013.01);
Abstract

A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.


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