The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Apr. 21, 2017
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Jong-Koo Lim, Icheon-si, KR;

Guk-Cheon Kim, Yeoju-si, KR;

Yang-Kon Kim, Icheon-si, KR;

Seung-Mo Noh, Seoul, KR;

Ku-Youl Jung, Icheon-si, KR;

Won-Joon Choi, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G06F 3/06 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G06F 12/084 (2016.01);
U.S. Cl.
CPC ...
G06F 3/0625 (2013.01); G06F 3/065 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0685 (2013.01); G06F 12/084 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/0004 (2013.01); H01L 27/224 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G06F 2212/314 (2013.01);
Abstract

This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure comprising a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer may include: a first under layer including a silicon-based alloy; a second under layer including a metal; and a blocking layer interposed between the first under layer and the second under layer and including an amorphous material.


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