The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Jun. 12, 2015
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Jung Hyung Lee, Seoul, KR;

Cheol Kyu Bok, Pohang, KR;

Keun Do Ban, Yongin, KR;

Myoung Soo Kim, Seongnam, KR;

Ki Lyoung Lee, Seoul, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/26 (2006.01); B32B 27/08 (2006.01); G03F 7/40 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
B32B 3/263 (2013.01); B32B 27/08 (2013.01); G03F 7/0002 (2013.01); G03F 7/40 (2013.01); B32B 2457/00 (2013.01); B32B 2457/20 (2013.01); B32B 2457/206 (2013.01); B32B 2551/00 (2013.01); Y10T 428/24612 (2015.01);
Abstract

A fine pattern structure includes a lower hard mask layer on a pattern formation layer having a first region and a second region, first upper hard mask patterns disposed on the lower hard mask layer in the first region to expose portions of the lower hard mask layer, a second upper hard mask pattern covering the lower hard mask layer in the second region, guide patterns on the first and second upper hard mask patterns, neutralization patterns on the exposed portions of the lower hard mask layer in the first region, a first block co-polymer layer covering the guide patterns in the first region and the neutralization patterns, and a second block co-polymer layer covering the guide pattern in the second region.


Find Patent Forward Citations

Loading…