The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

May. 08, 2015
Applicants:

Philippe Dupuy, Toulouse, FR;

Hubert Grandry, Espanes, FR;

Inventors:

Philippe Dupuy, Toulouse, FR;

Hubert Grandry, Espanes, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/07 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7804 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 27/0727 (2013.01); H01L 27/088 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.


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