The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
May. 04, 2016
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Clemens Ostermaier, Villach, AT;
Gerhard Prechtl, St. Jacob i. Rosental, AT;
Oliver Häberlen, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7785 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/1066 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/402 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 29/7783 (2013.01); H01L 29/785 (2013.01); H01L 29/0646 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01);
Abstract
A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a first p-type Group III-nitride layer, and a second side face of the multi-heterojunction fin structure is covered by a second p-type Group III-nitride layer.