The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Oct. 18, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 21/306 (2006.01); H01L 29/786 (2006.01); H01L 29/76 (2006.01); H01L 29/423 (2006.01); H01L 29/34 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/34 (2013.01); H01L 21/3085 (2013.01); H01L 21/30604 (2013.01); H01L 29/0692 (2013.01); H01L 29/20 (2013.01); H01L 29/24 (2013.01);
Abstract
A channel structure includes a first patterned channel layer including a lower portion and an upper portion. The upper portion is disposed on the lower portion. A width of the upper portion is larger than a width of the lower portion. A material or a material composition ratio of the upper portion is different from a material or a material composition ratio of the lower portion. The height and the channel length of the channel structure are increased by disposing the first patterned channel layer, and the saturation current (I) of a transistor including the channel structure of the present invention may be enhanced accordingly.