The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9837348 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 05, 2017

Filed:

Jul. 27, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jiun-Jie Huang, Kaohsiung, TW;

Ling-Sung Wang, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5222 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/7682 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 28/40 (2013.01); H01L 28/88 (2013.01); H01L 28/90 (2013.01); H01L 23/5227 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.


Find Patent Forward Citations

Huang, Jiun-Jie. (2017). Voids in interconnect structures and methods for forming the same (U.S. Patent No. 9837348). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9837348

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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