The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9837334 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 05, 2017

Filed:

Mar. 30, 2015
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Kheng Chok Tee, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Wei Liu, Singapore, SG;

Kam Chew Leong, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/38 (2006.01); H01L 23/373 (2006.01); H01L 27/12 (2006.01); H01L 35/30 (2006.01); H01L 35/32 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3677 (2013.01); H01L 21/7624 (2013.01); H01L 23/3736 (2013.01); H01L 23/3738 (2013.01); H01L 23/38 (2013.01); H01L 27/12 (2013.01); H01L 27/1203 (2013.01); H01L 35/30 (2013.01); H01L 35/32 (2013.01); H01L 23/367 (2013.01);
Abstract

Cooling devices for SOI wafers and methods for forming the devices are presented. A substrate having a top surface layer, a support substrate and an insulator layer isolating the top surface layer from the support substrate is provided. At least one device is disposed in the top surface layer of the substrate. The IC includes a cooling device. The cooling device includes a doped layer which is disposed in a top surface of the support substrate, and a RDL layer disposed within the support substrate below the doped layer for providing connections to hotspots in the doped layer to facilitate thermoelectric conduction of heat in the hotspots away from the hotspots.


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