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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9837302 B1

PDFFull Text
Expired
Date of Patent:
Dec. 05, 2017

Filed:

Aug. 26, 2016

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Sinan Goktepeli, San Diego, CA (US);

Stephen Alan Fanelli, San Marcos, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:

Toler Law Group, PC.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/66 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H04W 88/00 (2009.01);
U.S. Cl.
CPC ...
H01L 21/76256 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H04W 88/005 (2013.01);
Abstract

A method includes performing an etching process from a second side of a buried dielectric layer to expose an etch stop layer, where the second side of the buried dielectric layer is opposite a first side of the buried dielectric layer, and where a first semiconductor device is positioned on the first side of the buried dielectric layer. The method further includes forming a second semiconductor device on the second side of the buried dielectric layer.

Find Patent Forward Citations

Goktepeli, Sinan. (2017). Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer (U.S. Patent No. 9837302). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9837302

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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