The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Dec. 10, 2013
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Quan Wang, Shanghai, CN;
Jieqiong Dong, Shanghai, CN;
Deming Sun, Shanghai, CN;
Wei Zhou, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
This invention involves a fabrication method of fast recovery diode, which includes following steps: growing a sacrificial oxide layer on a surface of an N− substrate; forming a P type doped field-limiting ring region on the substrate; forming a P type doped anode region on the substrate; removing the sacrificial oxide layer; annealing the substrate to form a PN junction; implanting oxygen into the surface of the substrate by ion implantation; annealing the substrate to form a silicon dioxide layer on the surface of the substrate; removing the silicon dioxide layer; forming an anode electrode and a cathode electrode of the fast recovery diode. The method eliminates the curved parts near the silicon surface of the profile of PN junction, decreases electric field intensity at the surface of the substrate, therefore increases the breakdown voltage and reliability of the fast recovery diode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile