The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Apr. 06, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Su-Min Park, Seoul, KR;
Su-Min Kim, Suwon-si, KR;
Hyo-Jin Yun, Suwon-si, KR;
Hyun-Woo Kim, Seongnam-si, KR;
Kyoung-Seon Kim, Suwon-si, KR;
Hai-Sub Na, Seoul, KR;
Min-Ju Park, Seoul, KR;
So-Ra Han, Bucheon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.