The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Dec. 16, 2016
Lam Research Corporation, Fremont, CA (US);
Bhadri N. Varadarajan, Beaverton, OR (US);
Bo Gong, Sherwood, OR (US);
Guangbi Yuan, Beaverton, OR (US);
Zhe Gui, Beaverton, OR (US);
Fengyuan Lai, Tualatin, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote plasma treatment of the silicon carbide film alternatingly occur to control film density. A first thickness of silicon carbide film is deposited followed by a remote plasma treatment, and then a second thickness of silicon carbide film is deposited followed by another remote plasma treatment. The remote plasma treatment can flow radicals of source gas in a substantially low energy state, such as radicals of hydrogen in a ground state, towards silicon carbide film deposited on a substrate. The radicals of source gas in the substantially low energy state promote cross-linking and film densification in the silicon carbide film.