The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jun. 30, 2016
Zing Semiconductor Corporation, Shanghai, CN;
Deyuan Xiao, Shanghai, CN;
Richard R. Chang, Shanghai, CN;
ZING SEMICONDUCTOR CORPORATION, Shanghai, CN;
Abstract
This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.