The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jan. 10, 2013
Osaka University, Suita-shi, Osaka, JP;
Yusuke Mori, Suita, JP;
Mamoru Imade, Suita, JP;
Masashi Yoshimura, Suita, JP;
Mihoko Hirao, Suita, JP;
Masayuki Imanishi, Suita, JP;
OSAKA UNIVERSITY, Osaka, JP;
Abstract
The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer () as seed crystals for generation and growth of Group III nitride crystals (); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals () grown from the plural seed crystals by the growth of the Group III nitride crystals () are bound.