The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Jan. 05, 2017
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Yan Geng, Shanghai, CN;

Kai Zhu, Shanghai, CN;

Jie Chen, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/3562 (2006.01); H03K 19/0185 (2006.01); H03K 3/012 (2006.01); H03K 3/037 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01); H03K 3/012 (2013.01); H03K 3/0372 (2013.01); H03K 3/35625 (2013.01);
Abstract

A receiver includes a first transfer gate, a first inverter, a second inverter, a second transfer gate, a third inverter, and a fourth inverter connected in series, a first power supply supplying power to the first and second inverters, a second power supply supplying power to the third and fourth inverters, a third power supply supplying power to the second transfer gate, first and second signals having opposite logic levels for controlling the first transfer gate. The third power supply is significantly lower than the first or second power supply. The leakage current of the receiver is significantly reduced in the core when the second power supply remains on but the first power supply is turned off while the performance of the receiver remains the same.


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