The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9831374 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 28, 2017

Filed:

Dec. 20, 2013
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Benjamin Vincent, San Francisco, CA (US);

Avi Feshali, Los Angeles, CA (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/105 (2006.01); G02B 6/122 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); G02B 6/42 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); G02B 6/1228 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/1804 (2013.01); G02B 6/4295 (2013.01); G02B 2006/121 (2013.01); Y02E 10/52 (2013.01);
Abstract

Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.


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