The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Nov. 02, 2012
Applicants:

Chi-hsiang Kuo, Taoyuan County, TW;

Cheng-shun Chen, Miaoli County, TW;

Chang-yao Hsieh, Changhua County, TW;

Inventors:

Chi-Hsiang Kuo, Taoyuan County, TW;

Cheng-Shun Chen, Miaoli County, TW;

Chang-Yao Hsieh, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); H01G 4/232 (2006.01); H01G 4/005 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); H01L 27/10852 (2013.01);
Abstract

A process for fabricating a capacitor is described. A template layer including a stack of at least one first layer and at least one second layer is formed over a substrate, wherein the at least one first layer and the at least one second layer have different etching selectivities and are arranged alternately. An opening is formed through the template layer. A wet etching process is performed to recess the at least one first layer relative to the at least one second layer, at the sidewall of the opening. A bottom electrode of the capacitor is formed at the bottom of the opening and on the sidewall of the opening, and then the template layer is removed.


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