The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Feb. 02, 2016
Hitachi Kokusai Electric Inc., Tokyo, JP;
Satoshi Shimamoto, Toyama, JP;
Takaaki Noda, Toyama, JP;
Takeo Hanashima, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Hiroshi Ashihara, Toyama, JP;
Tsukasa Kamakura, Toyama, JP;
Shingo Nohara, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing HO and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CH-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.