The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jun. 29, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Vibhor Jain, Essex Junction, VT (US);
Renata A. Camillo-Castillo, Williston, VT (US);
Anthony K. Stamper, Burlington, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7378 (2013.01); H01L 29/0826 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/66242 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor with a stress component and methods of manufacture. The heterojunction bipolar transistor includes a collector region, an emitter region and a base region. Stress material is formed within a trench of a substrate and surrounding at least the collector region and the base region.