The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Dec. 21, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Tatsuji Nagaoka, Nagakute, JP;
Hiroki Miyake, Toyota, JP;
Yukihiko Watanabe, Nagakute, JP;
Sachiko Aoi, Nagakute, JP;
Atsuya Akiba, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Denso Corporation, Kariya-shi, JP;
Abstract
A Schottky barrier diode provided herein includes: a semiconductor substrate; and an anode electrode being in contact with the semiconductor substrate. The semiconductor substrate includes: p-type contact regions being in contact with the anode electrode; and an n-type drift region being in contact with the anode electrode by Schottky contact in a range where the p-type contact regions are not provided The p-type contact regions includes: a plurality of circular regions located so that the circular regions are arranged at intervals between an outer side and an inner side at a contact surface between the semiconductor substrate and the anode electrode; and an internal region located in an inner portion of the circular region located on an innermost side at the contact surface and connected to the circular region located on the innermost side at the contact surface.