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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9824936 B1

PDFFull Text
Date of Patent:
Nov. 21, 2017

Filed:

Oct. 13, 2016

Adjacent device isolation

Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Vladimir Machkaoutsan, Leuven, BE;

Mustafa Badaroglu, Leuven, BE;

Jeffrey Junhao Xu, San Diego, CA (US);

Stanley Seungchul Song, San Diego, CA (US);

Choh Fei Yeap, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:

Qualcomm Incorporated/Seyfarth

Primary Examiner:

Joseph Schoenholtz

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); B82Y 10/00 (2011.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823828 (2013.01); H01L 21/321 (2013.01); H01L 21/32133 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0642 (2013.01); H01L 29/0669 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); B82Y 10/00 (2013.01); H01L 21/82345 (2013.01); H01L 27/0883 (2013.01); H01L 27/0886 (2013.01);
Abstract

An integrated circuit (IC) device may include a first active transistor of a first-type in a first-type region. The first active transistor may have a first-type work function material and a low channel dopant concentration in an active portion of the first active transistor. The IC device may also include a first isolation transistor of the first-type in the first-type region. The second active transistor may have a second-type work function material and the low channel dopant concentration in an active portion of the first isolation transistor. The first isolation transistor may be arranged adjacent to the first active transistor.

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