The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Dec. 02, 2015
Applicant:
Jeol Ltd., Tokyo, JP;
Inventor:
Misumi Kadoi, Tokyo, JP;
Assignee:
JEOL Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); H01J 37/304 (2006.01); C23C 14/22 (2006.01); C23C 16/04 (2006.01); H01J 37/317 (2006.01); C23C 16/48 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01J 37/304 (2013.01); C23C 14/221 (2013.01); C23C 16/047 (2013.01); C23C 16/486 (2013.01); C23C 16/52 (2013.01); H01J 37/3178 (2013.01); H01J 2237/31732 (2013.01); H01J 2237/31749 (2013.01);
Abstract
A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.