The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jun. 29, 2016
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Davide Mantegazza, Palo Alto, CA (US);
Feng Pan, Boise, ID (US);
Prashant S. Damle, Santa Clara, CA (US);
Hanmant Pramod Belgal, El Dorado Hills, CA (US);
Kiran Pangal, Fremont, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01);
Abstract
A disclosed example to reduce a threshold voltage drift of a selector device of a memory cell includes providing an applied voltage to the selector device of the memory cell, the applied voltage being less than a threshold voltage of the selector device, and reducing the threshold voltage drift of the memory cell by maintaining the applied voltage at the selector device for a thresholding duration to activate the selector device.