The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Feb. 12, 2015
Ihi Corporation, Koto-ku, JP;
The University of Tokyo, Bunkyo-ku, JP;
Takeshi Nakamura, Tokyo, JP;
Masato Ishizaki, Tokyo, JP;
Kenji Fuchigami, Tokyo, JP;
Kozue Hotozuka, Tokyo, JP;
Yukihiro Shimogaki, Tokyo, JP;
Takeshi Momose, Tokyo, JP;
Yasuyuki Fukushima, Tokyo, JP;
Noboru Sato, Tokyo, JP;
Yuichi Funato, Tokyo, JP;
Hidetoshi Sugiura, Tokyo, JP;
IHI Corporation, Koto-ku, JP;
The University of Tokyo, Bunkyo-ku, JP;
Abstract
By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preformaccommodated in a reaction furnacefor film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnaceis used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.