The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Jan. 05, 2016
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Zihao M. Gao, Austin, TX (US);
David C. Burdeaux, Austin, TX (US);
Wayne Robert Burger, Austin, TX (US);
Christopher P. Dragon, Austin, TX (US);
Hernan A. Rueda, Austin, TX (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 29/0619 (2013.01); H01L 29/0692 (2013.01); H01L 29/404 (2013.01); H01L 29/66681 (2013.01);
Abstract
A semiconductor device with a current terminal region located in a device active area of a substrate of the device. A guard region is located in a termination area of the device. A plurality of floating field plates are located in the termination area and are ohmically coupled to the guard region. The floating field plates and guard region act in some embodiments to 'smooth' the electrical field distribution along the termination area.