The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Mar. 06, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Wei-Chi Lin, Zhubei, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Neng-Kuo Chen, Hsin-Chu, TW;

Sey-Ping Sun, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/28255 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 21/823462 (2013.01); H01L 29/165 (2013.01);
Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a substrate, the substrate includes a first fin, a second fin, and an isolation region disposed between the first fin and the second fin. The second fin includes a different material than a material of the substrate. The method includes forming an oxide over the first fin, the second fin, and a top surface of the isolation region at a temperature of about 400 degrees C. or less, and post-treating the oxide at a temperature of about 600 degrees C. or less.


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