The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Dec. 17, 2015
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Daniel Alvarado, Methuen, MA (US);
Klaus Becker, Kensington, NH (US);
David Ackerman, Gloucester, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An indirectly heated cathode (IHC) ion source having improved life is disclosed. The IHC ion source comprises a chamber having a cathode and a repeller on opposite ends of the ion source. Biased electrodes are disposed on one or more sides of the ion source. The bias voltage applied to at least one of the cathode, the repeller and the electrodes, relative to the chamber, is varied over time. In certain embodiments, the voltage applied to the electrodes may begin at an initial positive voltage. Over time, this voltage may be reduced, while still maintaining the target ion beam current. Advantageously, the life of the cathode is improved using this technique.