The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Apr. 30, 2015
Jung-hwan Lee, Hwaseong-si, KR;
Byung-gook Kim, Seoul, KR;
Sang-hyeon Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.