The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Mar. 19, 2010
Applicants:

Donald S Bethune, San Jose, CA (US);

Kailash Gopalakrishnan, San Jose, CA (US);

Andrew J Kellock, Sunnyvale, CA (US);

Rohit S Shenoy, Fremont, CA (US);

Inventors:

Donald S Bethune, San Jose, CA (US);

Kailash Gopalakrishnan, San Jose, CA (US);

Andrew J Kellock, Sunnyvale, CA (US);

Rohit S Shenoy, Fremont, CA (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/00 (2013.01); H01L 27/2409 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

A device has a MXYlayer in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Another device has MXYmaterial contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the following: Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.


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