The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Nov. 02, 2016
Silicongear Corporation, Hsinchu County, TW;
Chih-Cheng Liu, Hsinchu County, TW;
Jiong-Guang Su, Hsinchu County, TW;
Hung-Wen Chou, Hsinchu County, TW;
Silicongear Corporation, Hsinchu County, TW;
Abstract
A split-gate MOSFET includes first and second epitaxial layers, first, second, and third gates, a gate oxide layer, a trench oxide layer, and a trench implantation region formed on a substrate in order. The second epitaxial layer has a doping concentration greater than that of the first epitaxial layer. A plurality of trenches is in the first and second epitaxial layers. Both the first and second gates are located in each of the trenches in a cell region. The third gates are located in each of the trenches in a terminal region. The third gate closest to the cell region is grounded, and the others are floating. The gate oxide layer is disposed between the first and second gates. The trench oxide layer is located between the first gate and the first epitaxial layer and located between the trench surface and the third gate. The trench implantation region is located in the first epitaxial layer at the bottom of the trench and has a doping concentration less than that of the first epitaxial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile