The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Apr. 06, 2015
Hwi-chan Jun, Yongin-si, KR;
Heon-jong Shin, Yongin-si, KR;
Jae-ran Jang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Methods of forming a semiconductor device are provided. The methods may include forming a gate structure on a substrate, forming a first sacrificial pattern and a second sacrificial pattern on opposing sides of the gate structure respectively and partially replacing the first sacrificial pattern with a first insulating pattern such that a portion of the first sacrificial pattern remains in the first insulating pattern and replacing the second sacrificial pattern with a second insulating pattern. The methods may also include replacing at least some of the portion of the first sacrificial pattern that remains in the first insulating pattern with a conductive pattern.