The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

May. 18, 2016
Applicant:

Sandisk Technologies Llc;

Inventor:

Yukihiro Sakotsubo, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 23/528 (2013.01); H01L 27/2436 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/146 (2013.01);
Abstract

A middle electrode can be inserted at each intersection between a non-volatile memory element layer located on an electrically conductive word line and a non-linear element located on an electrically conductive bit line in a three-dimensional memory device. An oxygen-scavenging material portion can be provided between each electrically conductive word line and an adjoining insulator layer to scavenge oxygen from contacting portions of the non-volatile memory element layer, thereby forming an oxygen-scavenged non-volatile memory element portion that facilitates programming. The middle electrode and the oxygen-scavenged non-linear memory element portion can alter the programming characteristics of the non-volatile memory cells to provide easier and more reliable programming.


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