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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9812395 B1

PDFFull Text
Date of Patent:
Nov. 07, 2017

Filed:

Oct. 07, 2014

Methods of forming an interconnect structure using a self-ending anodic oxidation

Applicants:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Jenn-Gwo Hwu, Taipei, TW;

Wei-Cheng Tian, Taipei, TW;

Samuel C. Pan, Hsinchu, TW;

Chao-Hsiung Wang, Hsin-Chu, TW;

Chi-Wen Liu, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University, , TW;

Attorney:

Jones Day

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Bo Bin Jang

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/7682 (2013.01); H01L 21/76801 (2013.01); H01L 21/76885 (2013.01); H01L 21/76888 (2013.01); H01L 23/522 (2013.01); H01L 23/5283 (2013.01); H01L 2221/1094 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of forming low-k interconnect structure is disclosed, which comprises: providing at least one protruding structure on a substrate traversing between a first connection region to a second connection region defined thereon; performing anodic oxidation on the substrate having the protruding structure; forming one or more nanowire interconnect in the protruding structure traversing between the first connection region and the second connection region; the nanowire interconnect being surrounded by a dielectric layer formed during the anodic oxidation.

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Hwu, Jenn-Gwo. (2017). Methods of forming an interconnect structure using a self-ending anodic oxidation (U.S. Patent No. 9812395). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9812395

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