The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Jan. 31, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chich-Neng Chang, Pingtung County, TW;
Ya-Jyuan Hung, Kaohsiung, TW;
Bin-Siang Tsai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53295 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a dielectric layer is formed on the substrate, and an opening is formed in the dielectric layer, in which the dielectric layer includes a damaged layer adjacent to the opening. Next, a dielectric protective layer is formed in the opening, a metal layer is formed in the opening, and the damaged layer and the dielectric protective layer are removed.