The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9812328 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 07, 2017

Filed:

Jun. 22, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kaushal K. Singh, Santa Clara, CA (US);

Er-Xuan Ping, Fremont, CA (US);

Xianmin Tang, San Jose, CA (US);

Sundar Ramamurthy, Fremont, CA (US);

Randhir Thakur, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 23/485 (2013.01); H01L 23/53209 (2013.01); H01L 23/53219 (2013.01);
Abstract

Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.


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