The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Feb. 14, 2013
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventor:

Richard S. Ray, New Milford, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/08 (2006.01); C23C 14/06 (2006.01); C23C 14/48 (2006.01); C23C 14/52 (2006.01); C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); C23C 14/0694 (2013.01); C23C 14/48 (2013.01); C23C 14/52 (2013.01); C23C 14/54 (2013.01); H01J 37/08 (2013.01); H01J 2237/006 (2013.01); H01J 2237/022 (2013.01);
Abstract

Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.


Find Patent Forward Citations

Loading…