The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Sep. 29, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Avinash Chander, Jhubei, TW;
Yen-Huei Chen, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A memory device includes: a memory array comprising a first plurality of bit cells arranged along a first column; and a negative bit line (NBL) circuit, coupled to the memory array. The NBL circuit includes: a first pair of conducting gates that are coupled to the first plurality of bit cells through a bit line (BL) and a bit bar line (BBL) of the first column, respectively; and a pair of trigger circuits, coupled to the first pair of conducting gates, respectively, and configured to monitor voltage levels present on the BL and BBL of the first column through the respective first pair of conducting gates, and based on the monitored voltage levels, to assert an NBL enable signal so as to cause a negative voltage to be applied on either the BL or the BBL of the first column.