The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Oct. 11, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 21/441 (2006.01); H01L 21/467 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/441 (2013.01); H01L 21/467 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/24 (2013.01); H01L 29/42364 (2013.01); H01L 29/66969 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a source layer; removing part of the source layer to form a first opening; forming a first channel layer in the first opening; forming a gate layer around the first channel layer and on the source layer; forming a drain layer on the gate layer and the first channel layer; removing part of the drain layer to form a second opening; and forming a second channel layer in the second opening.