The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Oct. 03, 2014
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Avinash Srikrishnan Kashyap, Niskayuna, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 27/0255 (2013.01); H01L 29/6606 (2013.01); H01L 29/861 (2013.01); H01L 27/0814 (2013.01);
Abstract

A transient voltage suppression (TVS) device and a method of forming the device are provided. The TVS device includes a first layer of wide band-gap semiconductor material formed of a first conductivity type material, a second layer of wide band-gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer, the second layer including a first concentration of dopant. The TVS device further including a third layer of wide band-gap semiconductor material formed of the second conductivity type material over at least a portion of the second layer, the third layer including a second concentration of dopant, the second concentration of dopant being different than the first concentration of dopant. The TVS device further including a fourth layer of wide band-gap semiconductor material formed of the first conductivity type material over at least a portion of the third layer.


Find Patent Forward Citations

Bolotnikov, Alexander. (2017). Structure and method for transient voltage suppression devices with a two-region base (U.S. Patent No. 9806157). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9806157

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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