The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Apr. 28, 2016
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Joon-Hwa Bae, Suwon-si, KR;
Jong Chan Lee, Suwon-si, KR;
Woong Hee Jeong, Seoul, KR;
In Sun Hwang, Suwon-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1229 (2013.01); H01L 27/124 (2013.01); H01L 27/1274 (2013.01); H01L 29/04 (2013.01); H01L 29/1604 (2013.01);
Abstract
A manufacturing method of a thin film transistor array panel according to an exemplary embodiment of the present invention includes forming an amorphous silicon thin film on a substrate. A lower region of the amorphous silicon thin film is crystallized to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cmto about 250 mj/cmto the amorphous silicon thin film.