The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jul. 28, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Sanpo Wang, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a first insulating layer, a source and a drain, a stacked structure, a second insulating layer, and a gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed on the first insulating layer, and the stacked structure is also disposed on the first insulating layer, between the source and the drain. The stacked structure includes a charge storage layer and an oxide semiconductor (OS) layer disposed on the charge storage layer. The second insulating layer covers the source, the drain and the OS layer. The gate is disposed on the second insulating layer.