The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Apr. 27, 2015
Applicant:
Power Integrations, Inc., San Jose, CA (US);
Inventors:
Rajko Duvjnak, Kanata, CA;
William M. Polivka, Campbell, CA (US);
Assignee:
Power Integrations, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/10 (2006.01); G01R 19/00 (2006.01); G01R 35/00 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
G01R 19/10 (2013.01); G01R 19/0084 (2013.01); G01R 19/0092 (2013.01); G01R 31/2637 (2013.01); G01R 35/005 (2013.01);
Abstract
A method for sensing the current in a high-electron-mobility transistor (HEMT) that compensates for changes in a drain-to-source resistance of the HEMT. The method includes receiving a sense voltage representative of the current in the HEMT, receiving a compensation signal representative of a drain-to-source voltage of the HEMT, and outputting as a compensated sense voltage a linear combination of the sense voltage and the compensation signal.