The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Jun. 11, 2014
Applicant:

Nuflare Technology, Inc., Kanagawa, JP;

Inventors:

Takumi Yamada, Kanagawa, JP;

Yuusuke Sato, Tokyo, JP;

Assignee:

NuFlare Technology, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C30B 25/16 (2006.01); C30B 25/14 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/52 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); H01L 21/0254 (2013.01);
Abstract

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.


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